a d v a n c e d s e m i c o n d u c t o r, i n c. rev. a 7525 ethel avenue ? north hollywood, ca 91605 ? (818) 982-1200 ? fax (818) 765-3004 1/2 specifications are subjec t to change without notice. characteristics t c = 25 o c symbol none test conditions minimum typical maximum units bv cbo i c = 1.0 ma 45 v bv cer i c = 5.0 ma r be = 10 ? 45 v bv ebo i e = 1.0 ma 3.5 v i cbo v cb = 28 v 1.0 ma h fe v ce = 5.0 v i c = 200 ma 15 120 --- c ob v cb = 28 v f = 1.0 mhz 3.5 pf p g c v cc = 28 v p out = 3.0 w f = 2.0 ghz 10 35 db % npn silicon rf power transistor MSC82003 description: the asi MSC82003 is designed for general purpose class c power amplifier applications up to 2300 mhz. features: ? p g = 10 db min. at 3 w/ 2,000 mhz ? hermetic microstrip package ? omnigold ? metalization system maximum ratings i c 600 ma v cc 35 v p diss 21.8 w @ t c = 25 o c t j -65 o c to +200 o c t stg -65 o c to +200 o c jc 15 o c/w package style .250 2l flg common base minimum inches / mm .740 / 18.80 .128 / 3.25 .245 / 6.22 .028 / 0.71 .110 / 2.79 b c d e f g a maximum .255 / 6.48 .032 / 0.81 .117 / 2.97 .132 / 3.35 inches / mm .117 / 2.97 h .560 / 14.22 .570 / 14.48 dim k l i j .790 / 20.07 .225 / 5.72 .003 / 0.08 .810 / 20.57 .235 / 5.97 .007 / 0.18 l g i j k h f b e c ?d a n m p .060 x 45 chamfer p n m .149 / 3.78 .058 / 1.47 .187 / 4.75 .068 / 1.73 .165 / 4.19 .185 / 4.70 .135 / 3.43 .119 / 3.02 .125 / 3.18
a d v a n c e d s e m i c o n d u c t o r, i n c. rev. a 7525 ethel avenue ? north hollywood, ca 91605 ? (818) 982-1200 ? fax (818) 765-3004 2/2 error! reference source not found. MSC82003 specifications are subjec t to change without notice.
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